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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1717
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
DESCRIPTION
The PA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.
FEATURES
* Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = -10 V, ID = -3 A)
1.44
RDS(on)2 = 59 m MAX. (VGS = -4.5 V, ID = -3 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 0.3 4.4
+0.10 -0.05
* Low Ciss : Ciss = 830 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
0.8
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12 M
PA1717G
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
-30
# 25 #6 # 24
V V A A W C C
Gate Protection Diode Source Gate
Body Diode
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
2.0 150 -55 to +150
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14047EJ1V0DS00 (1st edition) Date Published June 2000 NS CP(K) Printed in Japan
(c)
1999, 2000
PA1717
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -3 A VGS = -4.5 V, ID = -3 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -3 A VDS = -30 V, VGS = 0 V VGS = # 25 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID = -3 A VGS(on) = -10 V VDD = -15 V RG = 6 ID = -6 A VDD = -24 V VGS = -10 V IF = 6 A, VGS = 0 V IF = 6 A, VGS = 0 V di/dt = 100 A / s 830 330 130 15 120 70 50 15 3 5 0.82 35 15 -1.5 3.0 MIN. TYP. 26 44 -2.0 7.5 -1
# 10
MAX. 33 59 -2.5
UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID (-) VGS (-) 0 = 1 s Duty Cycle 1 % ID
Wave Form
VGS (-) VGS
Wave Form
IG = -2 mA VGS(on)
90 %
RL VDD
0
10 %
PG.
90 % 90 %
50
ID
0 10 % 10 %
td(on) ton
tr td(off) toff
tf
2
Data Sheet G14047EJ1V0DS00
PA1717
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60
Mounted on ceramic substrate of 1200mm 2 x 2.2mm
0
20
40
60
80
100 120 140 160
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA -100
ID - Drain Current - A
-10
DS
RV t (a
-1
d ite ) im 0 V )L -1 n (o =
GS
ID(pulse)
PW
ID(DC)
Po
we
rD
s 1 10 0 m 0m s s
iss ipa tio
1m
=1
Remark Mounted on ceramic substrate of
00
s
1200 mm x 2.2 mm
2
n
Lim
-0.1 TA = 25 C Single Pulse -0.01 -0.01 -0.1
ite
d
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 62.5 C/W
10
1
0.1
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
0.01 0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14047EJ1V0DS00
3
PA1717
FORWARD TRANSFER CHARACTERISTICS -100 -10 VDS = -10 V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -30 -25
Pulsed
VGS = -10 V
ID - Drain Current - A
-1 -0.1 -0.01 -0.001
TA = 150C 75C 25C -25C
ID - Drain Current - A
-20 -15 -10 -5 -4.5 V
0
-1
-2
-3
Pulsed -4
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
100 TA = -25C 25C 75C 150C
VDS = -10 V Pulsed
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 60 50 40 30 20 10 0 -5 -10 -15 ID = -6 A -3 A
10
1
0.1 -0.1
-1
-10
-100
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed 80
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 -50
VDS = -10 V ID = -1 mA
60 VGS = -4.5 V 40 -10 V 20
0 -0.1
-1
-10
-100
- 1000
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet G14047EJ1V0DS00
PA1717
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 Pulsed
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed VGS = -4.5 V 10 0V
60
VGS = -4.5 V
ISD - Diode Forward Current - A
40
-10 V
1
0.1
20 ID = -3 A 150
0
-50
0
50
100
0.01 0.00
0.50
1.00
1.50
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
tr tf 100 td(off)
1000
Ciss Coss
td(on) 10
VGS(on) = -10 V VDD = -15 V RG = 6
100
Crss
10 -0.01
-0.1
-1
-10
-100
1 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DIODE CURRENT 1000
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
-30
100
-20
VDS = -24 V -15 V -6 V
-12 VGS -10 -8 -6
10
-10 VDS 0 5 10 15 20
-4 -2 0
1 -0.1
-1
-10
-100
IF - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 ID = -6 A
Data Sheet G14047EJ1V0DS00
5
PA1717
[MEMO]
6
Data Sheet G14047EJ1V0DS00
PA1717
[MEMO]
Data Sheet G14047EJ1V0DS00
7
PA1717
* The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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